来自麻省理工的研究人员展示了基于磁畴壁电操纵的器件能够实现线性以及可编程的非线性功能,该工作发表在知名期刊《Nano Letters》上
文章链接:https://pubs.acs.org/doi/10.1021/acs.nanolett.9b04200 摘要 磁畴壁是逻辑和记忆装置中的信息标记,并在逻辑计算和存储一体的神经形态加速器等应用方面有很大的前景。在这里,我们展示了基于磁畴壁电操纵的器件能够实现线性以及可编程的非线性功能。与其他方法不同,基于畴壁的设备非常适合应用于突触权重生成器和深度神经网络的阈值设定。微米尺寸的原型装置工作在8 ns电流脉冲和所需的能量消耗的重量调制是<= 16 pJ。速度和能量消耗都优于其他突触的非易失性器件,20nm器件的预期能量耗散接近生物神经元。 Magnetic domain walls are information tokens in both logic and memory devices and hold particular interest in applications such as neuromorphic accelerators that combine logic in memory. Here, we show that devices based on the electrical manipulation of magnetic domain walls are capable of implementing linear, as well as programmable nonlinear, functions. Unlike other approaches, domain-wall-based devices are ideal for application to both synaptic weight generators and thresholding in deep neural networks. Prototype micrometer-size devices operate with 8 ns current pulses and the energy consumption required for weight modulation is ≤16 pJ. Both speed and energy consumption compare favorably to other synaptic nonvolatile devices, with the expected energy dissipation for scaled 20 nm devices close to that of biological neurons. |