AFM|大规模鲁棒多功能的垂直排列MoS2光忆阻器

文章链接：https://dx.doi.org/10.1002/adfm.202005718

摘要

忆阻器件由于其在非易失性存储和神经形态计算方面的潜在应用而引起了相当大的关注。电阻式开关器件和光响应材料的结合被认为是将光信息与电路集成的一种新方法。另一方面，二维材料由于其独特的晶体结构和优异的化学、物理性能，引起了人们的广泛关注。虽然不是主要的焦点，但van der Waals固体被证明是忆阻器件的潜在候选材料。在这个方案中，大多数电阻开关器件是在通过机械剥离获得的平面薄膜上实现的。在这里，一种简单而稳健的方法被用来在标准硅衬底上生长大规模垂直排列的MoS2 (VA-MoS2)薄膜。具有银/VA-MoS2/Si结构的记忆器件具有较低的设定电压(<0.5 V)，较大的保持时间(>2×104 s)和高的热稳定性(高达350℃)。所提出的忆阻装置也表现出长期增强/抑制(LTP/LTD)和光激活记忆状态。大规模的制造潜力，加上低工作电压，高热稳定性，光响应行为以及LTP/LTD，使这种方法在开发非易失性存储器的应用极具潜力。

Memristive devices have drawn considerable research attention due to their potential applications in non-volatile memory and neuromorphic computing. The combination of resistive switching devices with light-responsive materials is considered a novel way to integrate optical information with electrical circuitry. On the other hand, 2D materials have attracted substantial consideration, thanks to their unique crystal structure, as reflected in their chemical and physical properties. Although not the major focus, van der Waals solids are proven to be potential candidates in memristive devices. In this scheme, the majority of the resistive switching devices are implemented on planar flakes, obtained by mechanical exfoliation. Here a facile and robust methodology is utilized to grow large-scale vertically aligned MoS2 (VA-MoS2) films on standard silicon substrates. Memristive devices with the structure silver/VA-MoS2/Si are shown to have low set-ON voltages (<0.5 V), large retention times (>2 × 104 s), and high thermal stability (up to 350 °C). The proposed memristive device also exhibits long term potentiation/depression (LTP/LTD) and photo-active memory states. The large-scale fabrication, together with the low operating voltages, high thermal stability, light responsive behavior, and LTP/LTD, make this approach very appealing for real-life non-volatile memory applications.