Small|基于二维Ti3C2Tx的新型忆阻器人工突触

文章链接：https://doi.org/10.1002/smll.201900107

摘要

二维材料因其优异的电化学性能和广阔的应用前景，引起了学术界广泛的研究兴趣。其中，二维过渡金属碳化物(Ti3C2Tx)具有半导体特性，得到了广泛的研究。然而，关于使用二维MXene材料作为记忆电阻器的学术报道很少。本文报道了一种基于MXene Ti3C2Tx薄片的记忆电阻器。电铸后，Al/Ti3C2Tx/Pt器件表现出可重复的电阻开关(RS)行为。更有趣的是，该器件的电阻可以在10 ns脉宽的脉冲序列下连续调制，而10 ns的脉宽比其他报道的工作要低得多。在纳秒尺度上，实现了从短期塑性向长期塑性的转变。这两项特性表明，该装置有利于生物突触的快速应用和神经网络的高效训练。通过对微观组织的探索，提出了Ti空位和部分氧化是RS行为物理机制的起源。本研究揭示了二维MXene Ti3C2Tx薄片在记忆电阻器件中具有良好的应用潜力，这可能为更多的功能和应用打开大门。

Two-dimensional (2D) materials have attracted extensive research interest in academia due to their excellent electrochemical properties and broad application prospects. Among them, 2D transition metal carbides (Ti3C2Tx) show semiconductor characteristics and are studied widely. However, there are few academic reports on the use of 2D MXene materials as memristors. In this work, reported is a memristor based on MXene Ti3C2Tx flakes. After electroforming, Al/Ti3C2Tx/Pt devices exhibit repeatable resistive switching (RS) behavior. More interestingly, the resistance of this device can be continuously modulated under the pulse sequence with 10 ns pulse width, and the pulse width of 10 ns is much lower than that in other reported work. Moreover, on the nanosecond scale, the transition from short-term plasticity to longterm plasticity is achieved. These two properties indicate that this device is favorable for ultrafast biological synapse applications and high-efficiency training of neural networks. Through the exploration of the microstructure, Ti vacancies and partial oxidation are proposed as the origins of the physical mechanism of RS behavior. This work reveals that 2D MXene Ti3C2Tx flakes have excellent potential for use in memristor devices, which may open the door for more functions and applications.